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NPN, 40V, 1.5A, SOT23

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Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.


  • MOSFET and IGBT gate driving
  • DC-DC conversion
  • LED driving
  • Interface between low voltage IC's and loads


  • High peak current
  • Low saturation voltage
  • 130V forward blocking voltage
  • 6V reverse blocking voltage
  • Product Specifications

    Product Parameters

    Qualified to AEC-Q10x Yes
    Compliance (Only Automotive supports PPAP) On Request*
    Product Type NPN
    VCEO, VCES (V) 40 V
    IC (A) 1.5 A
    ICM (A) 6 A
    PD (W) 0.35 W
    hFE (min) 300 Min
    hFE(@ IC) 1 A
    hFE(Min 2) 25
    hFE(@ IC2) 4 A
    VCE (SAT)Max (mV) 80 mV
    VCE (SAT) (@ IC/IB2) (A/m A) (A/m A) 2/200
    VCE (SAT)(Max.2) 185 mV
    VCE (SAT) (@ IC/IB) (A/m A) 1/5
    fT (MHz) 190 MHz
    RCE(SAT) N/A mΩ

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    Technical Documents

    SPICE Model


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    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples


    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Arrow Electronics 388 9/22/2021 United States Buy Now
    Farnell, An Avnet Company 70 9/22/2021 England Buy Now
    Mouser Electronics Inc. 798 9/22/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 50 9/21/2021 England Buy Now
    Request Sample


    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices