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ZXTN25040DFH

NPN, 40V, 4A, SOT23

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Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Application(s)

  • MOSFET gate drivers
  • Power switches
  • Motor control
  • DC fans
  • DC-DC converters
  • Product Specifications

    Product Parameters

    Qualified to AEC-Q10x Yes
    Compliance (Only Automotive supports PPAP) On Request*
    Product Type NPN
    VCEO, VCES (V) 40 V
    IC (A) 4 A
    ICM (A) 10 A
    PD (W) 1.25 W
    hFE (min) 300 Min
    hFE(@ IC) 1 A
    hFE(Min 2) 30
    hFE(@ IC2) 4 A
    VCE (SAT)Max (mV) 210 mV
    VCE (SAT) (@ IC/IB2) (A/m A) (A/m A) 1.5/100
    VCE (SAT)(Max.2) 190 mV
    VCE (SAT) (@ IC/IB) (A/m A) 0.1/10
    fT (MHz) 190 MHz
    RCE(SAT) N/A mΩ

    Related Content

    Packages

    Technical Documents

    SPICE Model

    MDS Reports

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    ZXTN25040DFHTA

    ZXTN25040DFHTA

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Arrow Electronics 35 9/17/2021 United States Buy Now
    Farnell, An Avnet Company 18 9/17/2021 England Buy Now
    Farnell, An Avnet Company 18 9/17/2021 England Buy Now
    Mouser Electronics Inc. 93 9/17/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 10350 9/17/2021 England Buy Now
    Future Electronics - Asia 24000 9/16/2021 Singapore Contact Sales
    Future Electronics - Europe 9000 9/16/2021 England Contact Sales
    Request Sample

    PCNs

    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices