Diodes Menu Close
Back to Transistors < 30V


NPN, 20V, 2A, SOT23

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.


Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.


  • MOSFET and IGBT gate driving
  • DC-DC conversion
  • LED driving
  • Interface between low voltage IC's and loads


  • High peak current
  • Low saturation voltage
  • 100V forward blocking voltage
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity NPN
    VCEO, VCES (V) 20
    IC (A) 2
    ICM (A) 8
    PD (W) 0.35
    hFE (Min) 300
    hFE (@ IC) (A) 0.01
    hFE(Min 2) 220
    hFE (@ IC2) (A) 2
    VCE(sat) Max (mV) 100
    VCE(SAT) (@ IC/IB) (A/mA) 1/20
    VCE(sat) (Max.2) (mV) 225
    VCE(sat) (@ IC/IB2) (A/mA) 2/20
    fT (MHz) 215
    RCE(sat) (mΩ) 55

    Related Content


    Technical Documents

    SPICE Model


    Recommended Soldering Techniques


    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples


    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Digi-Key Electronics 353 9/28/2021 Europe, Asia, North America Buy Now
    Mouser Electronics Inc. 10632 9/28/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 425 9/27/2021 England Buy Now
    Request Sample


    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices