Diodes Menu Close
Back to Transistors < 30V

ZXTN25012EFL

NPN, 12V, 2A, SOT23

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Application(s)

  • MOSFET and IGBT gate driving
  • DC-DC conversion
  • LED driving
  • Interface between low voltage IC's and load

    Feature(s)

  • High peak current
  • Low saturation voltage
  • 6V reverse blocking voltage
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity NPN
    VCEO, VCES (V) 12
    IC (A) 2
    ICM (A) 15
    PD (W) 0.35
    hFE (Min) 500
    hFE (@ IC) (A) 0.01
    hFE(Min 2) 210
    hFE (@ IC2) (A) 5
    VCE(sat) Max (mV) 65
    VCE(SAT) (@ IC/IB) (A/mA) 1/100
    VCE(sat) (Max.2) (mV) 130
    VCE(sat) (@ IC/IB2) (A/mA) 2/40
    fT (MHz) 260
    RCE(sat) (mΩ) 46

    Related Content

    Packages

    Technical Documents

    SPICE Model

    MDS Reports

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    ZXTN25012EFLT

    ZXTN25012EFLT

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Farnell, An Avnet Company 2844 9/21/2021 England Buy Now
    Request Sample
    ZXTN25012EFLTA

    ZXTN25012EFLTA

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Avnet EU 3000 9/21/2021 Germany Buy Now
    Arrow Electronics 5 9/21/2021 United States Buy Now
    Mouser Electronics Inc. 103 9/21/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 2300 9/21/2021 England Buy Now
    Request Sample

    PCNs

    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices