Diodes Incorporated
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT23.png
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ZXTN25012EFL

NPN, 12V, 2A, SOT23

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Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Feature(s)

  • High peak current
  • Low saturation voltage
  • 6V reverse blocking voltage
  • Application(s)

  • MOSFET and IGBT gate driving
  • DC-DC conversion
  • LED driving
  • Interface between low voltage IC's and load
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity NPN
    VCEO, VCES (V) 12
    IC (A) 2
    ICM (A) 15
    PD (W) 0.35
    hFE (Min) 500
    hFE (@ IC) (A) 0.01
    hFE(Min 2) 210
    hFE (@ IC2) (A) 5
    VCE(sat) Max (mV) 65
    VCE(SAT) (@ IC/IB) (A/mA) 1/100
    VCE(sat) (Max.2) (mV) 130
    VCE(sat) (@ IC/IB2) (A/mA) 2/40
    fT (MHz) 260
    RCE(sat) (mΩ) 46

    Related Content

    Packages

    Technical Documents

    SPICE Model

    MDS Reports

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices