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NPN, 12V, 2A, SOT23

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Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.


  • MOSFET and IGBT gate driving
  • DC-DC conversion
  • LED driving
  • Interface between low voltage IC's and load


  • High peak current
  • Low saturation voltage
  • 6V reverse blocking voltage
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity NPN
    VCEO, VCES (V) 12
    IC (A) 2
    ICM (A) 15
    PD (W) 0.35
    hFE (Min) 500
    hFE (@ IC) (A) 0.01
    hFE(Min 2) 210
    hFE (@ IC2) (A) 5
    VCE(sat) Max (mV) 65
    VCE(SAT) (@ IC/IB) (A/mA) 1/100
    VCE(sat) (Max.2) (mV) 130
    VCE(sat) (@ IC/IB2) (A/mA) 2/40
    fT (MHz) 260
    RCE(sat) (mΩ) 46

    Related Content


    Technical Documents

    SPICE Model

    MDS Reports

    Recommended Soldering Techniques


    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples


    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Farnell, An Avnet Company 2844 9/21/2021 England Buy Now
    Request Sample


    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Avnet EU 3000 9/21/2021 Germany Buy Now
    Arrow Electronics 5 9/21/2021 United States Buy Now
    Mouser Electronics Inc. 103 9/21/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 2300 9/21/2021 England Buy Now
    Request Sample


    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices