ZXTN2010ZQ

NPN, 60V, 5A, SOT89

Datasheet

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Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications.

Feature(s)

BV_CEO > 60V
I_C = 5A High Continuous Current
R_SAT = 30mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage V_CE(sat)< 65mV @ I_C = 1A
h_FE Specified up to 10A for High Current Gain Hold up
Complementary PNP Type: ZXTP2012ZQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The ZXTN2010ZQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Emergency lighting circuits
Motor driving (including DC fans)
Backlight inverters
Power switches
Gate driving MOSFETs and IGBTs

Product Specifications

Product Parameters

Category	Low Saturation Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	NPN
VCEO, VCES (V)	60
IC (A)	5
ICM (A)	20
PD (W)	2.1
hFE (Min)	100
hFE (@ IC) (A)	0.01
h_FE(Min 2)	55
hFE (@ IC2) (A)	5
VCE(sat) Max (mV)	30
V_CE(SAT) (@ IC/IB) (A/mA)	0.1/5
VCE(sat) (Max.2) (mV)	125
VCE(sat) (@ IC/IB2) (A/mA)	2/50
fT (MHz)	130
RCE(sat) (mΩ)	30

Technical Documents

SPICE Model

ZXTN2010ZQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2324	2018-02-28	2018-05-28	Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices