Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications.

Feature(s)

BV_CEO > 60V
I_C = 5A High Continuous Current
R_SAT = 30mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage V_CE(sat)< 65mV @ I_C = 1A
h_FE Specified up to 10A for High Current Gain Hold up
Complementary PNP Type: ZXTP2012ZQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The ZXTN2010ZQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Emergency lighting circuits
Motor driving (including DC fans)
Backlight inverters
Power switches
Gate driving MOSFETs and IGBTs

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
Category	Low Saturation Transistor
Polarity	NPN
VCEO, VCES (V)	60
IC (A)	5
ICM (A)	20
PD (W)	2.1
hFE (Min)	100
hFE (@ IC) (A)	0.01
h_FE(Min 2)	55
hFE (@ IC2) (A)	5
VCE(sat) Max (mV)	30
V_CE(SAT) (@ IC/IB) (A/mA)	0.1/5
VCE(sat) (Max.2) (mV)	125
VCE(sat) (@ IC/IB2) (A/mA)	2/50
fT (MHz)	130

Technical Documents

SPICE Model

ZXTN2010ZQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products

ZXTN2010ZQ