Diodes Incorporated
Back to Transistor (BJT) Master Table


NPN, 60V, 5A, SOT89

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.


  • BVCEO > 60V
  • IC = 5A High Continuous Current
  • RSAT = 30mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A
  • hFE Specified Up to 10A for High Current Gain Hold Up
  • Complementary PNP Type: ZXTP2012Z
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/


  • Emergency lighting circuits
  • Motor driving (including DC fans)
  • Backlight inverters
  • Power switches
  • Gate-driving MOSFETs and IGBTs

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
IC (A) 5
ICM (A) 20
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 55
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 30
VCE(SAT) (@ IC/IB) (A/mA) 0.1/5
VCE(sat) (Max.2) (mV) 125
VCE(sat) (@ IC/IB2) (A/mA) 2/50
fT (MHz) 130
RCE(sat) (mΩ) 30

Related Content


Technical Documents


Recommended Soldering Techniques



Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices