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ZXTC6718MCQ

Complementary, 20V, 4.5A, DFN3020-8

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • NPN Transistor
    • BVCEO > 20V
    • IC = 4.5A Continuous Collector Current
    • Low Saturation Voltage (150mV Max @ 1A)
    • RSAT = 47mΩ for a Low Equivalent On-Resistance
  • PNP Transistor
    • BVCEO > -20V
    • IC = -3.5A Continuous Collector Current
    • Low Saturation Voltage (-220mV Max @ -1A)
    • RSAT = 64mΩ for a Low Equivalent On-Resistance
  • hFE Characterized up to 6A for High Current Gain Hold Up
  • Low Profile 0.8mm High Package for Thin Applications
  • RθJA Efficient, 40% Lower than SOT26
  • 6mm2 Footprint, 50% Smaller than TSOP6 and SOT26

Application(s)

  • DC-DC Converters
  • Charging Circuits
  • Power Switches
  • Motor Control
  • LED Backlighting Circuits
  • Portable Applications

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

Category

Low Saturation Transistor

Polarity

NPN + PNP

VCEO, VCES (V)

20

IC (A)

4.5, 3.5

ICM (A)

12, 6

PD (W)

1.7

hFE (Min)

300

hFE (@ IC) (A)

0.2, 0.1

hFE(Min 2)

200, 150

hFE (@ IC2) (A)

2

VCE(sat) Max (mV)

150, 220

VCE(SAT) (@ IC/IB) (A/mA)

1/10, 1/20

VCE(sat) (Max.2) (mV)

135, 250

VCE(sat) (@ IC/IB2) (A/mA)

2/50, 1.5/50

fT (MHz)

100, 150

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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