Diodes Incorporated
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ZXTC6718MCQ

Complementary, 20V, 4.5A, DFN3020-8

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • NPN Transistor
    • BVCEO > 20V
    • IC = 4.5A Continuous Collector Current
    • Low Saturation Voltage (150mV Max @ 1A)
    • RSAT = 47mΩ for a Low Equivalent On-Resistance
  • PNP Transistor
    • BVCEO > -20V
    • IC = -3.5A Continuous Collector Current
    • Low Saturation Voltage (-220mV Max @ -1A)
    • RSAT = 64mΩ for a Low Equivalent On-Resistance
  • hFE Characterized up to 6A for High Current Gain Hold Up
  • Low Profile 0.8mm High Package for Thin Applications
  • RθJA Efficient, 40% Lower than SOT26
  • 6mm2 Footprint, 50% Smaller than TSOP6 and SOT26

Application(s)

  • DC-DC Converters
  • Charging Circuits
  • Power Switches
  • Motor Control
  • LED Backlighting Circuits
  • Portable Applications

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + PNP
VCEO, VCES (V) 20
IC (A) 4.5, 3.5
ICM (A) 12, 6
PD (W) 1.7
hFE (Min) 300
hFE (@ IC) (A) 0.2, 0.1
hFE(Min 2) 200, 150
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 150, 220
VCE(SAT) (@ IC/IB) (A/mA) 1/10, 1/20
VCE(sat) (Max.2) (mV) 135, 250
VCE(sat) (@ IC/IB2) (A/mA) 2/50, 1.5/50
fT (MHz) 100, 150
RCE(sat) (mΩ) 47, 64

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC