Diodes Incorporated

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Complementary, 40V, 3.5A, SOT26

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Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications.


  • MOSFET and IGBT gate driving
  • Motor drive
  • Product Specifications

    Product Parameters

    Category Low Saturation Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity NPN + PNP
    VCEO, VCES (V) 40
    IC (A) 3.5, 3
    ICM (A) 9
    PD (W) 1.1
    hFE (Min) 280, 200
    hFE (@ IC) (A) 1
    hFE(Min 2) 40, 20
    hFE (@ IC2) (A) 3.5, 3
    VCE(sat) Max (mV) 110, 290
    VCE(SAT) (@ IC/IB) (A/mA) 1/20
    VCE(sat) (Max.2) (mV) 220, 260
    VCE(sat) (@ IC/IB2) (A/mA) 2/40, 3/300
    fT (MHz) 190, 270
    RCE(sat) (mΩ) 38, 58

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    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices