Diodes Incorporated
SOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT26-Chip-Image.png
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ZXTC2061E6

Complementary, 12V, 5A, SOT26

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Description

Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications.

Application(s)

  • MOSFET and IGBT gate driving
  • Motor drive

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN + PNP
VCEO, VCES (V) 12
IC (A) 5, 3.5
ICM (A) 12, 10
PD (W) 1.1
hFE (Min) 480, 290
hFE (@ IC) (A) 1
hFE(Min 2) 260, 75
hFE (@ IC2) (A) 5, 3.5
VCE(sat) Max (mV) 60, 265
VCE(SAT) (@ IC/IB) (A/mA) 1/10
VCE(sat) (Max.2) (mV) 80, 360
VCE(sat) (@ IC/IB2) (A/mA) 2/40
fT (MHz) 260, 310
RCE(sat) (mΩ) 25, 45

Related Content

Packages

Technical Documents

SPICE Model

MDS Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices