Diodes Incorporated
SOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT26-Chip-Image.png
Back to Transistor (BJT) Master Table

ZXTC2045E6

Complementary, 30V, 1.5A, SOT26

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications.

Feature(s)

  • NPN + PNP combination
  • BVCEO > 30 (-30)V
  • BVCEV > 40 (-40)V
  • ICM = 5 (-5)A Peak Pulse Current
  • Totally Lead-Free & Fully RoHS compliant 
  • Halogen and Antimony Free. “Green” Device 
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP capable 

Application(s)

  • MOSFET and IGBT gate driving
  • Motor drive

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN + PNP
VCEO, VCES (V) 30
IC (A) 1.5
ICM (A) 5
PD (W) 1.1
hFE (Min) 180
hFE (@ IC) (A) 0.1
hFE(Min 2) -
hFE (@ IC2) (A) -
VCE(sat) Max (mV) 375
VCE(SAT) (@ IC/IB) (A/mA) 0.75/15
VCE(sat) (Max.2) (mV) -
VCE(sat) (@ IC/IB2) (A/mA) -
fT (MHz) 195, 265
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

MDS Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2632 2023-06-13 2023-09-11 Addition of A Passivation Layer Over The Top Metal of The Die for Select BJT Products