Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
60V N-Channel Self-Protected Enhancement Mode IntelliFET MOSFET
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The ZXMS6008N8 is a self-protected low side MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6008N8 is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
Compliance (Only Automotive Supports PPAP) |
Automotive |
|---|---|
AEC Qualified |
Yes |
Configuration |
Single |
Polarity |
N |
BVDSS (V) |
60 |
ID VIN = 5V (A) |
1.1 |
PD (W) |
1.15 |
RDS(ON) Max @ VIN (3V) (mΩ) |
800 |
RDS(ON) Max @VIN (5V) (mΩ) |
700 |
VDS(SC) VIN = 5V (V) |
36 |
EAS (mJ) |
210 |
TJ (°C) |
150 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
