Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
60V Dual N-Channel Self-Protected Enhancement Mode IntelliFET MOSFET
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The ZXMS6006DN8 is a dual self-protected low-side IntelliFET® MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6006DN8 is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Configuration |
Dual |
Polarity |
N |
BVDSS (V) |
60 |
ID VIN = 5V (A) |
2.8 |
PD (W) |
1.67 |
RDS(ON) Max @ VIN (3V) (mΩ) |
125 |
RDS(ON) Max @VIN (5V) (mΩ) |
100 |
VDS(SC) VIN = 5V (V) |
16 |
EAS (mJ) |
210 |
TJ (°C) |
150 |
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