Diodes Incorporated — Analog and discrete power solutions
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ZXMS6004DT8

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET

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Description

The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality independently per channel. The ZXMS6004DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Application(s)

  • Two completely isolated independent channels
  • Especially suited for loads with a high in-rush current such as lamps and motors.
  • All types of resistive, inductive and capacitive loads in switching applications.
  • µC compatible power switch for 12V and 24V DC applications.
  • Automotive rated.
  • Replaces electromechanical relays and discrete circuits.
  • Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low VDS.

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Configuration Dual
Polarity N
TAB -
BVDSS (V) 60
ID VIN = 5V (A) 1.2
PD (W) 2.13
RDS(ON) Max @ VIN (3V) (mΩ) 600
RDS(ON) Max @VIN (5V) (mΩ) 500
VDS(SC) VIN = 5V (V) 36
EAS (mJ) 210
TJ (°C) 150

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TN1.pdf

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