70V P-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
Compliance (Only Automotive Supports PPAP) |
Automotive |
---|---|
AEC Qualified |
Yes |
Polarity |
P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
70 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
5.7 A |
PD @TA = +25°C (W) |
4.17 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
160 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
250 mΩ |
|VGS(TH)| Max (V) |
1 V |
QG Typ @ |VGS| = 4.5V (nC) |
9.6 (@5V) nC |
QG Typ @ |VGS| = 10V (nC) |
18 nC |
CISS Condition @|VDS| (V) |
40 V |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.