P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation Trench MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 3.4 |
PD @TA = +25°C (W) | 0.95 |
RDS(ON)Max@ VGS(10V)(mΩ) | 80 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 140 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 10V (nC) | 7 nC |
CISS Typ (pF) | 370 pF |