Diodes Incorporated
Back to Inactve Datasheet Archive

ZXMP2120G4 (Not Recommended for new design)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits.

Application(s)

  • Active clamping of primary side MOSFETs in 48 volt DC-DC converters
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) Standard
    CISS Typ (pF) 100 max @ 25V
    Compliance (Only Automotive(Q) supports PPAP) Standard
    ESD Diodes (Y|N) No
    |IDS| @TA = +25°C (A) 0.2
    PD @TA = +25°C (W) 2
    Polarity P
    AEC Qualified Yes
    RDS(ON)Max@ VGS(10V)(mΩ) 25000
    |VDS| (V) 200
    |VGS| (±V) 20
    |VGS(TH)| Max (V) 3.5

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC