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ZXMP2120G4 (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits.

Application(s)

Active clamping of primary side MOSFETs in 48 volt DC-DC converters

Specifications & Technical Documents

Product Parameters

C_ISS Typ (pF)	100 max @ 25V
ESD Diodes (Y\|N)	No
Polarity	P
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V) (mΩ)	25000
\|V_DS\| (V)	200
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	3.5

Technical Documents

SPICE Model

ZXMP2120G4.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products