Diodes Incorporated
SOT25

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SOT25.png
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ZXMP2120E5 (Not Recommended for new design)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

Application(s)

Active clamping of primary side MOSFETs in 48 volt DC-DC converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) N/A
CISS Typ (pF) N/A
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 0.122
PD @TA = +25°C (W) 0.75
Polarity P
QG Typ @ |VGS| = 10V (nC) N/A
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 28000
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
|VDS| (V) 200
|VGS| (±V) 20
|VGS(TH)| Max (V) 3.5

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf