Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT25
NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.
Active clamping of primary side MOSFETs in 48 volt DC-DC converters
CISS Condition @|VDS| (V) |
N/A |
|---|---|
CISS Typ (pF) |
N/A |
ESD Diodes (Y|N) |
No |
Polarity |
P |
QG Typ @ |VGS| = 10V (nC) |
N/A |
QG Typ @ |VGS| = 4.5V (nC) |
N/A |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(10V) (mΩ) |
28000 |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
N/A |
|VDS| (V) |
200 |
|VGS| (±V) |
20 |
|VGS(TH)| Max (V) |
3.5 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
