Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.
Active clamping of primary side MOSFETs in 48 volt DC-DC converters
| Compliance (Only Automotive supports PPAP) | No |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 0.122 |
| PD @TA = +25°C (W) | 0.75 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | N/A |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 28000 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | N/A |
| |VDS| (V) | 200 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 3.5 |
