Diodes Incorporated
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ZXMN6A08GQ

60V SOT223 N-channel enhancement mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive

Application(s)

  • BLDC Motors
  • DC-DC Converters
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.3 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(10V)(mΩ) 80 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 150 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 4 (@5V) nC
QG Typ @ |VGS| = 10V (nC) 5.8 nC
CISS Typ (pF) 459 pF
CISS Condition @|VDS| (V) 40 V

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Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC