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ZXMN3AMC

30V Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Disconnect switches
  • Portable applications
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    N+N

    ESD Diodes (Y|N)

    No

    |VDS| (V)

    30 V

    |VGS| (±V)

    20 ±V

    |IDS| @TA = +25°C (A)

    3.7, 3.0 A

    PD @TA = +25°C (W)

    1.7 W

    RDS(ON)Max@ VGS(10V)  (mΩ)

    120 mΩ

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    180 mΩ

    |VGS(TH)| Max (V)

    3 V

    QG Typ @ |VGS| = 4.5V (nC)

    2.3 nC

    QG Typ @ |VGS| = 10V (nC)

    3.9 nC

    CISS Typ (pF)

    190 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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