Diodes Incorporated — Analog and discrete power solutions
SOT23

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ZXMN3A14FQ

30V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Low threshold

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

30 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

3.9 A

PD @TA = +25°C (W)

1 W

RDS(ON)Max@ VGS(10V)  (mΩ)

65 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

95 mΩ

|VGS(TH)| Max (V)

2.2 V

QG Typ @ |VGS| = 10V (nC)

8.6 nC

CISS Typ (pF)

448 pF

CISS Condition @|VDS| (V)

15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2768 2025-12-10 2026-03-10 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) along with New Internal Wafer Source (OFAB) and Shanghai Assembly and Test Site (SAT) as Additional Assembly & Test (A/T) Sites with Standardization of Assembly Bill of Materials, and Change of Mold Compound Type as well as Die Attach Material at Currently Qualified A/T Site for Select Automotive Products
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products