Diodes Incorporated
SOT26

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SOT26-Chip-Image.png
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ZXMN10A08E6

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speeds, this makes it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Disconnect Switches
  • Motor control
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 100 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 1.5
    PD @TA = +25°C (W) 1.1
    RDS(ON)Max@ VGS(10V)(mΩ) 250 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 300 (@6V) mΩ
    |VGS(TH)| Max (V) 4 V
    QG Typ @ |VGS| = 4.5V (nC) 4.2 (@5V) nC
    QG Typ @ |VGS| = 10V (nC) 7.7 nC
    CISS Typ (pF) 405 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC