100V SO8 Complementary enhancement mode MOSFET H-Bridge
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Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
2N2P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
100 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
0.8,0.68 A |
PD @TA = +25°C (W) |
0.87 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
700, 1000 mΩ |
QG Typ @ |VGS| = 10V (nC) |
2.9, 3.5 nC |
CISS Typ (pF) |
138, 141 pF |
CISS Condition @|VDS| (V) |
60, 50 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |