Diodes Incorporated

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12V 9A Gate Driver in SOT26

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The ZXGD3001E6Q is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V with typical propagation delay times down to 3ns and rise/fall times down to 11ns. This device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high-current fast-switching applications.

The ZXGD3001E6Q is inherently rugged to latchup and shoot-through. Its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.

Its low-input voltage requirement and high current gain allows high current driving from low voltage controller ICs.

The optimized pinout SOT26 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.


  • 12V Operating Voltage Range
  • 9A Peak Output Current
  • Fast-Switching Emitter-Follower Configuration
    • 3ns Propagation Delay Time
    • 11ns Rise/Fall Time, 1000pF Load
  • Low-Input Current Requirement
    • 2A (Source)/2.2A (Sink) Output Current from 10mA Input
  • SOT26 Package
  • Separate Source and Sink Outputs for Independent Control of Rise and Fall Time
  • Optimized Pinout to Ease Board Layout and Minimize Trace Inductance
  • No Latchup
  • No Shoot-Through
  • Near-Zero Quiescent and Output Leakage Current
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The ZXGD3001E6Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/


 Power MOSFET and IGBT gate driving in

  • Synchronous switch-mode power supplies
  • Secondary side synchronous rectification
  • Plasma display panel power modules
  • 1, 2, and 3-phase motor control circuits
  • Audio switching amplifier power output stages

Product Specifications

Product Parameters

Category Gate Driver Transistors
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + PNP
VIN & VCC max (V) 12
I(source) typ  (A) 4.2
@ IIN  (mA) 10
I(sink) typ  (A) 2.2
@ IIN 2 (mA) 10 (mA)
IPK typ (A) 9 A
@ IIN  2 (A) 1 A
td(rise) typ (ns) 1.3 ns
tr typ (ns) 7.3 ns
td(fall) typ (ns) 3 ns
tf typ (ns) 11 ns

Related Content


Technical Documents

Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2324 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices