Diodes Incorporated
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ZX5T951GQ

PNP, 60V, 5.5A, SOT223

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Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • BVCEO > -60V
  • IC = -5.5A High Continuous Collector Current
  • ICM = -15A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < -70mV @ -1A
  • RSAT = 39mΩ for a Low Equivalent On-Resistance
  • hFE Specified Up to -10A for a High Gain Hold Up
  • Complementary NPN Type: ZX5T851GQ
  • Lead-Free Finish; RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The ZX5T951GQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC Converters
  • MOSFET & IGBT Gate Drivers
  • Charging Circuits
  • Power Switches
  • Motor Control

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
VCEO, VCES (V) 60
IC (A) 6
ICM (A) 15
PD (W) 3
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 100
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 30
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 130
VCE(sat) (@ IC/IB2) (A/mA) 2/200
fT (MHz) 120
RCE(sat) (mΩ) 40
Spice Model N/A

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC