100V P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications
Compliance (Only Automotive Supports PPAP) |
Automotive |
---|---|
AEC Qualified |
Yes |
Polarity |
P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
100 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
0.075 A |
PD @TA = +25°C (W) |
0.33 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
20000 mΩ |
|VGS(TH)| Min (V) |
1.5 V |
|VGS(TH)| Max (V) |
3.5 V |
CISS Typ (pF) |
50 pF |
CISS Condition @|VDS| (V) |
25 V |
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