N-Channel Enhancement Mode MOSFET
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This 250V enhancement mode N-channel MOSFET provides users with a competitive specification. It offers efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdowns. Applications benefiting from this device include a variety of telecom and general high-voltage circuits.
SOT89 and SOT223 versions are also available.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
250 V |
|VGS| (±V) |
40 ±V |
|IDS| @TA = +25°C (A) |
0.23 A |
PD @TA = +25°C (W) |
1.1 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
8500 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
9000 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
9500 (@2.4V) mΩ |
|VGS(TH)| Max (V) |
1.8 V |
CISS Typ (pF) |
72 @ 25V pF |
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