Diodes Incorporated

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N Channel

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This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications. Complementary Type – ZVP3310F


  • General purpose 100V FET
  • Power management
  • Disconnect switches
  • Telecoms
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 100 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 0.1
    PD @TA = +25°C (W) 0.33
    RDS(ON)Max@ VGS(10V)(mΩ) 10000 mΩ
    |VGS(TH)| Max (V) 2.4 V
    CISS Typ (pF) 40 max @ 25V pF

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