50A Bidirectional Surface-Mount Thyristor Surge Protective Device
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
Configuration |
Bi-Directional |
|---|---|
Type |
TSPD |
Junction Temperature TJ Max (°C) |
150 |
Peak Pulse Current@ 10/1000μsIpp (A) |
50 A |
Off-State CapacitanceCO (pF) |
100 pF |
Rated Repetitive Off-State VoltageVDRM Max (V) |
58 V |
Off-State Leakage Current @ VDRMIDRM Max (µA) |
5 µA |
On-State Voltage@ IT = 1AVT Max (V) |
3.5 V |
Breakover CurrentIBO Min (mA)VBO Min (V) |
50 mA |
Breakover CurrentIBO Max (mA)VBO Max (V) |
800 mA |
Holding CurrentIH Min (mA) |
150 mA |
Holding CurrentIH Max (mA) |
800 mA |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |