Diodes Incorporated
SOD123F

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SDM160S1F

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Description

The SDM160S1F is a single rectifier packaged in SOD123F. Offering low VF, low power loss and high efficiency, this device is ideal for use in general rectification applications.

Feature(s)

  • Guard Ring Die Construction for Transient Protection
  • Low Power Loss, High Efficiency
  • Interlocking Clip Design for High Surge Current Capacity
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Boost Diode
  • Blocking Diode

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
MaximumAverageRectifiedCurrent IO (A) 1 A
@ TerminalTemperature TT (ºC) N/A ºC
Peak RepetitiveReverse VoltageVRRM (V) 60 V
Peak ForwardSurge CurrentIFSM(A) 50 A
Forward VoltageDrop VF(V) 0.53 V
@ IF (A) 1 A
Maximum ReverseCurrent IR (µA) 60 µA
@ VR (V) 60 V
TotalCapacitance CT (pF) 48 pF

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2679 2024-04-01 2024-04-01 Qualification of Additional Wafer Source for Select Discrete Products
PCN-2623 2023-05-15 2023-11-15 Device End of Life (EOL)
PCN-2588 2022-06-01 2022-09-01 Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound, and Qualification of Additional
Diodes Internal Assembly & Test Site (SSEC) for Select Discrete Products
PCN-2477 2020-08-17 2021-05-09 Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi
PCN-2398 2019-05-21 2019-08-21 Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products

FAQs

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