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SDM1100LP

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

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Description

The Schottky Barrier Rectifier is designed with low VF and low reverse leakage in a low profile DFN2020 package.

Feature(s)

  • Guard Ring Die Construction Transient Protection
  • Low Power Loss, High Efficiency
  • Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation
  • Reduced high temperature reverse leakage and increased reliability against thermal runaway failure in high temperature operation
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Blocking Diode
  • Boost Diode
  • Recirculating Diode

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Configuration

Single

MaximumAverageRectifiedCurrent IO (A)

1 A

Peak RepetitiveReverse VoltageVRRM (V)

100 V

Peak ForwardSurge CurrentIFSM(A)

40 A

Forward VoltageDrop VF(V)

0.77 V

@ IF (A)

1 A

Maximum ReverseCurrent IR (µA)

350 µA

@ VR (V)

100 V

TotalCapacitance CT (pF)

40 pF

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2623 2023-05-15 2023-11-15 Device End of Life (EOL)
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2477 2020-08-17 2021-05-09 Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi