Diodes Incorporated — Analog and discrete power solutions
Back to SDM02L30CP3

SDM02L30CP3

0.2A SCHOTTKY BARRIER DIODE IN CHIP SCALE PACKAGE

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

The SDM02L30CP3 is a 30-volt 200mA Schottky Barrier Diode that is optimized for very low forward voltage drop and low leakage current. It’s housed in a compact Chip Scale Package (CSP) that occupies only 0.18mm2 board space. The low thermal resistance enables designers to meet design challenges of increasing efficiency while reducing board space. It is ideally suited for use in portable applications.

Feature(s)

  • 0.18mm2 Footprint, Off Board Profile of 0.275mm
  • Very Low Forward Voltage – Minimizes Power Dissipation Losses
  • Low Leakage – Maximizes Battery Power
  • Soft, Fast Switching Capability
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Blocking Diode
  • Reverse Protection Diode
  • Boost Diode

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Configuration

Single

Peak RepetitiveReverse VoltageVRRM (V)

30 V

Forward Continuous Current IFM (mA)

200 mA

Forward VoltageDrop VF(V)

0.44

@ IF(mA)

200 mA

Maximum ReverseCurrent IR (µA)

120 µA

@ VR (V)

30 V

Capacitance CTOT Typ (pF)

N/A pF

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2560 2021-12-16 2021-12-16 Additional Wafer Source (GFAB) and Additional Assembly and Test Site (SAT)