Diodes Incorporated

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The SBR3U40S1F is a single rectifier packaged in SOD123F, offering very low forward voltage drop (VF) and lower reverse leakage stability at high temperatures.


  • Ultra Low Forward Voltage Drop
  • Superior Forward Surge Capability
  • Patented Interlocking Clip Design for High Surge Current Capacity
  • Patented Super Barrier Rectifier Technology (SBR)
  • +150°C Operation Junction Temperature


  • DC-DC Converter
  • AC-DC Rectifier
  • Reverse Polarity Protection
  • SMPS
  • Blocking Diode

Product Specifications

Product Parameters

@ TerminalTemperature TT (ºC) -
AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Maximum Average Rectified Current IO (A) 3
Peak Repetitive Reverse Voltage VRRM (V) 40
Peak Forward Surge Current IFSM (A) 50
Forward VoltageDrop VF(V) 0.49
@ IF (A) 3
Maximum Reverse Current IR (μA) 180
@ VR (V) 40
Reverse Recovery Time trr (ns) -
Total Capacitance CT (pF) -

Related Content



Technical Documents

Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2660 2024-03-13 2024-06-13 Qualification of Additional Wafer Source with Wafer Diameter and Mold Compound Changes for Select Discrete Products
PCN-2588 2022-06-01 2022-09-01 Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound, and Qualification of Additional
Diodes Internal Assembly & Test Site (SSEC) for Select Discrete Products
PCN-2398 2019-05-21 2019-08-21 Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products


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