Diodes Incorporated
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SBR12E45LH1 (Not Recommended for new design)

NRND = Not Recommended for New Design


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The SBR12E45LH1 uses SBR patented technology that offers ultra- low VF to reduce forward power loss and improve efficiency.

Encapsulated in the new PowerDI5SP (Type B) package with a 0.75mm low height profile and protruding leads for easy soldering.


  • Designed as bypass diodes for solar panels
  • Low profile height (0.75mm) and 7.6mm protruding leads, enabling the package to be integrated within the solar glass panel
  • Selectively rated for +200°C maximum junction temperature for high thermal reliability and excellent high temperature stability
  • Patented Super Barrier Rectifier SBR® technology
  • Ultra low forward voltage drop to minimize forward power losses
  • Very low reverse leakage to ensures maximum efficiency of solar panel


  • Bypass Diodes for Solar Panels

Product Specifications

Product Parameters

@ IF (A) 12
@ TerminalTemperature TT (ºC) -
@ VR (V) 45
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Forward VoltageDrop VF(V) 0.52
Maximum Average Rectified Current IO (A) 12
Maximum Reverse Current IR (μA) 300
Peak Forward Surge Current IFSM (A) 300
Peak Repetitive Reverse Voltage VRRM (V) 45
AEC Qualified No
Reverse Recovery Time trr (ns) -
Total Capacitance CT (pF) -

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Technical Documents

Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2623 2023-05-15 2023-11-15 Device End of Life (EOL)
PCN-2498 2021-04-07 2021-04-07 Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products


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