Diodes Incorporated
SOT23

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SOT23.png
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MMBT5551

NPN, 160V, 0.6A, SOT23

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Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 160
IC (A) 0.6
ICM (A) -
PD (W) 0.3
hFE (Min) 80
hFE (@ IC) (A) 0.01
hFE(Min 2) 30
hFE (@ IC2) (A) 0.05
VCE(sat) Max (mV) 150
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 200
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2632 2023-06-13 2023-09-11 Addition of A Passivation Layer Over The Top Metal of The Die for Select BJT Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site