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MMBF170Q

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching, performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power Management Functions
  • Analog Switch

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive (Q)
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±
|IDS| @TA = +25°C (A) 0.5
PD @ TA = +25°C (W) 0.3
RDS(ON)Max @ VGS(10V)(mΩ) 5000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 5300 mΩ
|VGS(th)| Max (V) 3 V
CISS Typ (pF) 40
CISS Condition [@VDS] (V) 10

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products

FAQs

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