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switching diode
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AEC Qualified | No |
---|---|
Compliance (Only Automotive supports PPAP) | Standard |
Configuration | Triple, Isolated (Alt.) |
Polarity | Anode, Cathode |
Power Rating (mW) | 350 mW |
ESD Diodes (Y|N) | No |
Peak RepetitiveReverse VoltageVRRM (V) | 80 V |
Reverse Recovery Time trr (ns) | 4 ns |
Maximum Average Rectifier Current IO (mA) | 250 mA |
Maximum Peak Forward Surge Current IFSM (A) | 4 A |
Forward Voltage Drop VF @ IF (mA) | 1 mA |
Maximum ReverseCurrent IR (µA) | 0.1 µA |
TotalCapacitance CT (pF) | 3.5 pF |
V(BR)R (V) Min @IR=100?A | 80@2.5?A |
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100? | 4 |
Maximum Reverse Current IR @ VR (V) | 70 V |
IR(uA) Max @ VR=80V | 100nA@70V |
CT(pF) Max @ VR = 0V, f = 1MHz | 3.5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
PCN-2315 | 2018-03-09 | 2018-06-09 | Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility |