Diodes Incorporated
Back to Transistor (BJT) Master Table


NPN, 150V, 5A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.


  • BVCEO > 150V
  • IC = 5A High Continuous Collector Current
  • ICM = 10A Peak Pulse Current
  • Very Low Saturation Voltage VCE(sat) < 110mV @ 1A
  • RCE(sat) = 50mΩ for a Low Equivalent On-Resistance
  • HFE Specified Up to 10A for a High Gain Hold-Up
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODES™ FZT855Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 150
IC (A) 5
ICM (A) 10
PD (W) 3
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 15
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 65
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 110
VCE(sat) (@ IC/IB2) (A/mA) 1/100
fT (MHz) 90
Spice Model FZT855.spice.txt

Related Content


Technical Documents

Recommended Soldering Techniques