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FZT855Q

NPN, 150V, 5A, SOT223

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Feature(s)

BVCEO > 150V
I_C = 5A High Continuous Collector Current
ICM = 10A Peak Pulse Current
Very Low Saturation Voltage VCE(sat) < 110mV @ 1A
R_CE(sat) = 50mΩ for a Low Equivalent On-Resistance
H_FE Specified Up to 10A for a High Gain Hold-Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ FZT855Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Automotive
Category	High Voltage Transistor
Polarity	NPN
VCEO, VCES (V)	150
IC (A)	5
ICM (A)	10
PD (W)	3
hFE (Min)	100
hFE (@ IC) (A)	0.01
h_FE(Min 2)	15
hFE (@ IC2) (A)	5
VCE(sat) Max (mV)	65
V_CE(SAT) (@ IC/IB) (A/mA)	0.5/50
VCE(sat) (Max.2) (mV)	110
VCE(sat) (@ IC/IB2) (A/mA)	1/100
fT (MHz)	90
Spice Model	FZT855.spice.txt

Recommended Soldering Techniques

TN1.pdf

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