Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

BV_CEO > -25V
I_C = -3A High Continuous Current
Low Saturation Voltage V_CE(sat)< -250mV @ -1A
R_CE(sat)= 93mΩ for a Low Equivalent On-Resistance
h_FE Specified up to -6A for a High Gain Hold-Up
Complementary NPN Type: DIODES™ FZT689B
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ FZT789AQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Application(s)

Power MOSFET & IGBT Gate Driving
Battery Powered Circuits
Fast Charge Converters
Low Loss Power Switching

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
Category	Medium Power Transistor
Polarity	PNP
VCEO, VCES (V)	25
IC (A)	3
ICM (A)	6
PD (W)	2
hFE (Min)	300
hFE (@ IC) (A)	0.01
h_FE(Min 2)	100
hFE (@ IC2) (A)	6
VCE(sat) Max (mV)	250
V_CE(SAT) (@ IC/IB) (A/mA)	1/10
VCE(sat) (Max.2) (mV)	450
VCE(sat) (@ IC/IB2) (A/mA)	2/20
fT (MHz)	100

Technical Documents

SPICE Model

FZT789AQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2738	2025-07-11	2025-10-10	Qualification of New Deflashing and Tin Plating Line

FZT789AQ