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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. 

Feature(s)

  • BVCEO > 120V
  • IC = 1A Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 500mW Power Dissipation
  • hFE characterised up to 1A for high current gain hold up

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Automotive
Product Type NPN
VCEO, VCES (V) 120 V
IC (A) 1 A
ICM (A) 2 A
PD (W) 0.5 W
hFE (min) 100 Min
hFE(@ IC) 0.25 A
hFE(Min 2) 60
hFE(@ IC2) 1 A
VCE (SAT)Max (mV) 200 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.25/25
VCE (SAT) (@ IC/IB2) (A/mA) 0.5/50
fT (MHz) 100
VCE (SAT)(Max.2) 300 mV
RCE(SAT) N/A mΩ

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
FMMT494QTA

FMMT494QTA

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 5741 9/17/2021 South America, North America, Asia, Europe, Middle East Buy Now
Digi-Key Electronics 6087 9/16/2021 Europe, Asia, North America Buy Now
Request Sample
FMMT494QTC

FMMT494QTC

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 9756 9/17/2021 South America, North America, Asia, Europe, Middle East Buy Now
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2261 2017-02-24 2017-05-24 Add Additional Plating Process Site at Diodes Technology (Chengdu) Company Limited (CAT) for Select Automotive Parts