Diodes Incorporated
SOT23

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SOT23.png
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FMMT494Q

NPN, 120V, 1A, SOT23

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. 

Feature(s)

  • BVCEO > 120V
  • IC = 1A Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 500mW Power Dissipation
  • hFE characterised up to 1A for high current gain hold up

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 120
IC (A) 1
ICM (A) 2
PD (W) 0.5
hFE (Min) 100
hFE (@ IC) (A) 0.25
hFE(Min 2) 60
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.25/25
VCE(sat) (Max.2) (mV) 300
VCE(sat) (@ IC/IB2) (A/mA) 0.5/50
fT (MHz) 100
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC