Diodes Incorporated
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FCX458Q

NPN, 400V, 0.225A, SOT89

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • BVCEO > 400V
  • IC = 225mA Continuous Collector Current
  • ICM = 500mA Peak Pulse Current
  • Excellent hFE Characteristics up to 100mA
  • Low saturation voltage VCE(sat) < 200mV @ 20mA
  • Complementary PNP Type: FCX558Q
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The FCX458Q is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 400
IC (A) 0.225
ICM (A) 0.5
PD (W) 1
hFE (Min) 100
hFE (@ IC) (A) 0.001
hFE(Min 2) 15
hFE (@ IC2) (A) 0.1
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.02/2
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 0.05/6
fT (MHz) 50
RCE(sat) (mΩ) N/A

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf