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NPN, 400V, 0.225A, SOT89

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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.


  • BVCEO > 400V
  • IC = 225mA Continuous Collector Current
  • ICM = 500mA Peak Pulse Current
  • Excellent hFE Characteristics up to 100mA
  • Low saturation voltage VCE(sat) < 200mV @ 20mA
  • Complementary PNP Type: FCX558Q
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The FCX458Q is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 400
IC (A) 0.225
ICM (A) 0.5
PD (W) 1
hFE (Min) 100
hFE (@ IC) (A) 0.001
hFE(Min 2) 15
hFE (@ IC2) (A) 0.1
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.02/2
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 0.05/6
fT (MHz) 50
RCE(sat) (mΩ) N/A

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