Diodes Incorporated
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DZTA42Q

NPN, 300V, 0.5A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet theĀ stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 300V
  • IC = 500mA High Collector Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) < 500mV @ 20mA

Application(s)

  • Switch-Mode Power Supplies (SMPS)
  • Video Output Stages
  • Motor Driver

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 300
IC (A) 0.5
ICM (A) -
PD (W) 1
hFE (Min) 40
hFE (@ IC) (A) 0.01
hFE(Min 2) 40
hFE (@ IC2) (A) 0.03
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 0.02/2
VCE(sat) (Max.2) (mV) -
VCE(sat) (@ IC/IB2) (A/mA) -
fT (MHz) 50
RCE(sat) (mĪ©) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)