Diodes Incorporated
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DZT5551Q

NPN, 160V, 0.6A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 160V
  • BVEBO > 6V
  • IC = 600mA Continuous Collector Current
  • Low Saturation Voltage (150mV max @10mA)
  • hFE Specified Up to 50mA for a High Gain Hold Up
  • Complementary PNP Type: DZT5401
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Application(s)

  • High Voltage Amplification Applications
  • High Voltage Switching

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 160
IC (A) 0.6
ICM (A) 1
PD (W) 2
hFE (Min) 80
hFE (@ IC) (A) 0.01
hFE(Min 2) 30
hFE (@ IC2) (A) 0.05
VCE(sat) Max (mV) 150
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 200
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)