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Description

100V PNP HIGH PERFORMANCE TRANSISTOR IN POWERDI3333-8

Application

• High Side Switch
• MOSFET or IGBT Gate Driving

Features

• BVCEO > -100V
• Small Form Factor Thermally Efficient Package.
• Enables Higher Density End Products
• IC = -2A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -250mV @ -1A
• Complementary NPN Type: DXTN07100BFG
• Rated to +175°C—Ideal For High Temperature Environment
• Wettable Flank For Improved Optical Inspection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

Product Specifications

Product Parameters

Qualified to AECQ10x Yes
Automotive Compliant PPAP On Request*
Product Type PNP
VCEO, VCES 100 V
IC 2 A
ICM 6 A
PD 0.9 W
hFE 100 Min
hFE (@ IC) 0.5 A
hFE (Min 2) 55
hFE (@ IC2) 1 A
VCE (SAT) Max 250 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.02/2
VCE (SAT) (Max.2) 500 mV
VCE (SAT) (@ IC/IB2) (A/m A) 0.05/6
fT 100
RCE(SAT) N/A mΩ

Related Content

Packages
PowerDI3333-8

Technical Documents

Recommended Soldering Techniques

RoHS CofC

Orderable Part Number Authorized Distributor Quantity Inventory Date Buy Online Region
DXTP07100BFG-7 Digi-Key Electronics 2000 11/12/2019 Buy Now United States
DXTP07100BFG-7 Mouser Electronics Inc. 1890 11/12/2019 Buy Now United States