PNP, 100V, 2A, PowerDI3333-8
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100V PNP HIGH PERFORMANCE TRANSISTOR IN POWERDI3333-8
• BVCEO > -100V
• Small Form Factor Thermally Efficient Package.
• Enables Higher Density End Products
• IC = -2A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -250mV @ -1A
• Complementary NPN Type: DXTN07100BFG
• Rated to +175°C—Ideal For High Temperature Environment
• Wettable Flank For Improved Optical Inspection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• High Side Switch
• MOSFET or IGBT Gate Driving
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
Category |
175°C Medium Power Transistor |
Polarity |
PNP |
VCEO, VCES (V) |
100 |
IC (A) |
2 |
ICM (A) |
6 |
PD (W) |
2.1 |
hFE (Min) |
100 |
hFE (@ IC) (A) |
0.5 |
hFE(Min 2) |
55 |
hFE (@ IC2) (A) |
1 |
VCE(sat) Max (mV) |
250 |
VCE(SAT) (@ IC/IB) (A/mA) |
1/100 |
VCE(sat) (Max.2) (mV) |
500 |
VCE(sat) (@ IC/IB2) (A/mA) |
2/200 |
fT (MHz) |
140 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2691 | 2024-08-16 | 2024-11-14 | Additional Wafer Sources and Transfer of Wafer Manufacturing Site for Select Discrete Products |
