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Description

40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8

Application

• High Side Switch
• Low Drop Out Regulator
• MOSFET or IGBT Gate Driving

Features

• BVCEO > -40V
• Small Form Factor Thermally Efficient Package.
• Enables Higher Density End Products
• IC = -3A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -400mV @ -1A
• Minimum hFE 200 @ IC=-1A
• Rated to +175°C—Ideal For High Temperature Environment
• Wettable Flank For Improved Optical Inspection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

Product Specifications

Product Parameters

Qualified to AECQ10x Yes
Automotive Compliant PPAP DXTP07040CFGQ
Product Type PNP
VCEO, VCES 40 V
IC 3 A
ICM 6 A
PD 0.9 W
hFE 250 Min
hFE (@ IC) 0.5 A
hFE (Min 2) 200
hFE (@ IC2) 1 A
VCE (SAT) Max 200 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.5/2.5
VCE (SAT) (Max.2) 400 mV
VCE (SAT) (@ IC/IB2) (A/m A) 3/30
fT 100
RCE(SAT) N/A mΩ

Related Content

Packages
PowerDI3333-8

Technical Documents

Recommended Soldering Techniques

RoHS CofC