Diodes Incorporated
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DXT751Q

PNP, 60V, 3A, SOT89

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. 

Feature(s)

  • BVCEO > -60V
  • IC = -3A High Continuous Collector Current
  • ICM up to -6A Peak Pulse Current
  • 2W Power Dissipation
  • Complementary PNP Type: DXT651Q

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
VCEO, VCES (V) 60
IC (A) 3
ICM (A) 6
PD (W) 1
hFE (Min) 100
hFE (@ IC) (A) 0.5
hFE(Min 2) 40
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 300
VCE(SAT) (@ IC/IB) (A/mA) 1/100
VCE(sat) (Max.2) (mV) 600
VCE(sat) (@ IC/IB2) (A/mA) 3/300
fT (MHz) 145
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2639 2023-09-26 2023-12-26 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products