Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

BV_CEO > -60V
I_C = -3A High Continuous Collector Current
I_CM up to -6A Peak Pulse Current
2W Power Dissipation
Complementary PNP Type: DXT651Q

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
Category	Medium Power Transistor
Polarity	PNP
RCE(sat) (mΩ)	-
VCEO, VCES (V)	60
IC (A)	3
ICM (A)	6
PD (W)	1
hFE (Min)	100
hFE (@ IC) (A)	0.5
h_FE(Min 2)	40
hFE (@ IC2) (A)	2
VCE(sat) Max (mV)	300
V_CE(SAT) (@ IC/IB) (A/mA)	1/100
VCE(sat) (Max.2) (mV)	600
VCE(sat) (@ IC/IB2) (A/mA)	3/300
fT (MHz)	145

Technical Documents

SPICE Model

DXT751Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2639	2023-09-26	2023-12-26	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products

DXT751Q