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DXT5551

NPN, 160V, 0.10.6A, SOT89

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Feature(s)

  • BVCEO > 160V
  • IC = 600mA High Collector Current
  • Complementary PNP Type: DXT5401
  • Ideal for Medium Power Switching or Amplification Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

Category

High Voltage Transistor

Polarity

NPN

RCE(sat) (mΩ)

-

VCEO, VCES (V)

160

IC (A)

0.6

ICM (A)

-

PD (W)

1

hFE (Min)

80

hFE (@ IC) (A)

0.01

hFE(Min 2)

30

hFE (@ IC2) (A)

0.05

VCE(sat) Max (mV)

150

VCE(SAT) (@ IC/IB) (A/mA)

0.01/1

VCE(sat) (Max.2) (mV)

200

VCE(sat) (@ IC/IB2) (A/mA)

0.05/5

fT (MHz)

100

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site