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DSS60601MZ4Q

NPN, 60V, 6A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 60V
  • IC = 6A High Continuous Current
  • ICM = 12A Peak Pulse Current
  • Low Saturation Voltage VCE(SAT) < 60mV @ 1A
  • Complementary PNP Type: DSS60600MZ4
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Specifications & Technical Documents

Product Parameters

RCE(sat) (mΩ)

40

Compliance (Only Automotive Supports PPAP)

Automotive

Category

Low Saturation Transistor

Polarity

NPN

VCEO, VCES (V)

60

IC (A)

6

ICM (A)

12

PD (W)

2

hFE (Min)

120

hFE (@ IC) (A)

1

hFE(Min 2)

50

hFE (@ IC2) (A)

6

VCE(sat) Max (mV)

60

VCE(SAT) (@ IC/IB) (A/mA)

1/100

VCE(sat) (Max.2) (mV)

220

VCE(sat) (@ IC/IB2) (A/mA)

3/60

fT (MHz)

100

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability