Diodes Incorporated
Back to Transistor (BJT) Master Table

DSS60601MZ4Q

NPN, 60V, 6A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 60V
  • IC = 6A High Continuous Current
  • ICM = 12A Peak Pulse Current
  • Low Saturation Voltage VCE(SAT) < 60mV @ 1A
  • Complementary PNP Type: DSS60600MZ4
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 60
IC (A) 6
ICM (A) 12
PD (W) 2
hFE (Min) 120
hFE (@ IC) (A) 1
hFE(Min 2) 50
hFE (@ IC2) (A) 6
VCE(sat) Max (mV) 60
VCE(SAT) (@ IC/IB) (A/mA) 1/100
VCE(sat) (Max.2) (mV) 220
VCE(sat) (@ IC/IB2) (A/mA) 3/60
fT (MHz) 100
RCE(sat) (mΩ) 40

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC