Diodes Incorporated
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DSS60600MZ4Q

PNP, 60V, 6A, SOT223

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Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

• Ideally Suited for Automated Assembly Processes

• Ultra Low Collector-Emitter Saturation Voltage

• Complementary NPN Type Available (DSS60601MZ4Q)

• Ideal for Medium Power Switching or Amplification Applications

• Totally Lead-Free & Fully RoHS Compliant 

• Halogen and Antimony Free. “Green” Device 

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable 

Application(s)

  • Medium Power Switching
  • Amplification Applications

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
VCEO, VCES (V) 60
IC (A) 6
ICM (A) 12
PD (W) 2
hFE (Min) 120
hFE (@ IC) (A) 1
hFE(Min 2) 70
hFE (@ IC2) (A) 6
VCE(sat) Max (mV) 70
VCE(SAT) (@ IC/IB) (A/mA) 1/100
VCE(sat) (Max.2) (mV) 250
VCE(sat) (@ IC/IB2) (A/mA) 3/60
fT (MHz) 100
RCE(sat) (mΩ) 45

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC