Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

• Ideally Suited for Automated Assembly Processes

• Ultra Low Collector-Emitter Saturation Voltage

• Complementary NPN Type Available (DSS60601MZ4Q)

• Ideal for Medium Power Switching or Amplification Applications

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. “Green” Device

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable

Application(s)

Medium Power Switching
Amplification Applications

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
Category	Low Saturation Transistor
Polarity	PNP
RCE(sat) (mΩ)	45
VCEO, VCES (V)	60
IC (A)	6
ICM (A)	12
PD (W)	2
hFE (Min)	120
hFE (@ IC) (A)	1
h_FE(Min 2)	70
hFE (@ IC2) (A)	6
VCE(sat) Max (mV)	70
V_CE(SAT) (@ IC/IB) (A/mA)	1/100
VCE(sat) (Max.2) (mV)	250
VCE(sat) (@ IC/IB2) (A/mA)	3/60
fT (MHz)	100

Technical Documents

SPICE Model

DSS60600MZ4Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products

DSS60600MZ4Q