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DSS5220TQ

PNP, 20V, 2A, SOT23

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Application(s)

  • Matrix light applications

Feature(s)

  • BVCEO > -20V
  • IC = -2A Continuous Collector Current
  • ICM = -3A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < -150mV @ -1A
  • RCE(SAT) = 113mΩ for a low equivalent on-resistance

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Automotive
Product Type PNP
VCEO, VCES (V) 20 V
IC (A) 2 A
ICM (A) 3 A
PD (W) 1.2 W
hFE (min) 225 Min
hFE(@ IC) 0.1 A
hFE(Min 2) 150
hFE(@ IC2) 0.5 A
VCE (SAT)Max (mV) 80 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.5/50
VCE (SAT)(Max.2) 150 mV
VCE (SAT) (@ IC/IB2) (A/mA) 2/100
fT (MHz) 100 MHz
RCE(SAT) 113 mΩ

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC