Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 (Type B)

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)

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DSS45160FDB

Complementary, 60V, 1A, DFN2020-6

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Feature(s)

  • Complementary NPN/PNP
  • NPN Transistor:
    • BVCEO > 60V
    • IC = 1A high Continuous Collector Current
    • Low Saturation Voltage VCE(sat) < 220mV @ 1A
  • PNP Transistor:
    • BVCEO > -60V
    • IC = -1A high Continuous Collector Current
    • Low Saturation Voltage VCE(sat) < -340mV @ -1A
  • PD up to 2.47W for power demanding applications
  • RθJA efficient, 40% lower than SOT26
  • Low profile 0.6mm high package for thin applications

Application(s)

  • Load Switch
  • Power Management
  • Charging Circuits
  • Power Switches (e.g. Motors, Fans)

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

Category

Low Saturation Transistor

Polarity

NPN + PNP

RCE(sat) (mΩ)

240, 360

VCEO, VCES (V)

60

IC (A)

1

ICM (A)

1.5

PD (W)

1.6

hFE (Min)

290, 170

hFE (@ IC) (A)

0.1

hFE(Min 2)

70

hFE (@ IC2) (A)

1

VCE(sat) Max (mV)

120, 180

VCE(SAT) (@ IC/IB) (A/mA)

0.5/50

VCE(sat) (Max.2) (mV)

240, 550

VCE(sat) (@ IC/IB2) (A/mA)

1/50

fT (MHz)

90, 65

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products