Diodes Incorporated
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DSS45160FDB

Complementary, 60V, 1A, DFN2020-6

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Feature(s)

  • Complementary NPN/PNP
  • NPN Transistor:
    • BVCEO > 60V
    • IC = 1A high Continuous Collector Current
    • Low Saturation Voltage VCE(sat) < 220mV @ 1A
  • PNP Transistor:
    • BVCEO > -60V
    • IC = -1A high Continuous Collector Current
    • Low Saturation Voltage VCE(sat) < -340mV @ -1A
  • PD up to 2.47W for power demanding applications
  • RθJA efficient, 40% lower than SOT26
  • Low profile 0.6mm high package for thin applications

Application(s)

  • Load Switch
  • Power Management
  • Charging Circuits
  • Power Switches (e.g. Motors, Fans)

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN + PNP
VCEO, VCES (V) 60
IC (A) 1
ICM (A) 1.5
PD (W) 1.6
hFE (Min) 290, 170
hFE (@ IC) (A) 0.1
hFE(Min 2) 70
hFE (@ IC2) (A) 1
VCE(sat) Max (mV) 120, 180
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 240, 550
VCE(sat) (@ IC/IB2) (A/mA) 1/50
fT (MHz) 90, 65
RCE(sat) (mΩ) 240, 360

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices